Specification	ECH8315-TL-H

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

ECH8315 Series

P-Channel Power MOSFET, -30V, -7.5A, 25mΩ

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature	Technology	FET Type	Mounting Type	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
ON Semiconductor ECH8315-TL-H	1.5 W	7.5 A	30 V	150 °C	MOSFET (Metal Oxide)	P-Channel	Surface Mount	20 V	8-ECH	4 V	10 V	25 mOhm	18 nC
ON Semiconductor ECH8315-TL-W	1.5 W	7.5 A	30 V	150 °C	MOSFET (Metal Oxide)	P-Channel	Surface Mount	20 V	SOT-28FL/ECH8	4 V	10 V	25 mOhm	18 nC	2.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.74
		10	$ 0.65
		100	$ 0.45
		500	$ 0.37
		1000	$ 0.32
	Digi-Reel®	1	$ 0.74
		10	$ 0.65
		100	$ 0.45
		500	$ 0.37
		1000	$ 0.32
	Tape & Reel (TR)	3000	$ 0.28
		6000	$ 0.27
		9000	$ 0.25
		30000	$ 0.25
Newark	Each (Supplied on Full Reel)	3000	$ 0.33
		6000	$ 0.30
		12000	$ 0.28
		18000	$ 0.27
		30000	$ 0.25
ON Semiconductor	N/A	1	$ 0.26

Description

General part information

ECH8315 Series

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements.