Specification	FQB19N20TM

Current - Continuous Drain (Id) @ 25°C	19.4 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	140 W
Power Dissipation (Max)	3.13 W
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQB19N20L Series

Power MOSFET, N-Channel, Logic Level, QFET<sup>®</sup>, 200 V, 21 A, 140 mΩ, D2PAK

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FQB19N20LTM	Surface Mount	140 mOhm	10 V	5 V	N-Channel	200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	21 A	35 nC	140 W	3.13 W	2200 pF	20 V	-55 °C	150 °C	TO-263 (D2PAK)	2 V	MOSFET (Metal Oxide)
ON Semiconductor FQB19N20TM	Surface Mount				N-Channel	200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	19.4 A	40 nC	140 W	3.13 W	1600 pF	30 V	-55 °C	150 °C	TO-263 (D2PAK)	5 V	MOSFET (Metal Oxide)	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.90
		10	$ 1.88
		100	$ 1.30
	Digi-Reel®	1	$ 2.90
		10	$ 1.88
		100	$ 1.30
	Tape & Reel (TR)	800	$ 1.00
		1600	$ 0.92
		2400	$ 0.91
Newark	Each (Supplied on Full Reel)	800	$ 1.14
ON Semiconductor	N/A	1	$ 0.97

Description

General part information

FQB19N20L Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Documents

Technical documentation and resources

Package Drawing-418AJ-D2PAK-3 (TO-263, 3-LEAD)

Package Drawing

Datasheet

Product Change Notice EN

Datasheet

Technical Data Sheet EN

Datasheet