FQB19N20L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 21 A, 140 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 21 A, 140 mΩ, D2PAK

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FQB19N20LTM	Surface Mount	140 mOhm	10 V	5 V	N-Channel	200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	21 A	35 nC	140 W	3.13 W	2200 pF	20 V	-55 °C	150 °C	TO-263 (D2PAK)	2 V	MOSFET (Metal Oxide)
ON Semiconductor FQB19N20TM	Surface Mount				N-Channel	200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	19.4 A	40 nC	140 W	3.13 W	1600 pF	30 V	-55 °C	150 °C	TO-263 (D2PAK)	5 V	MOSFET (Metal Oxide)	10 V

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 21 A, 140 mΩ, D2PAK

Key Features

• 21A, 200V, RDS(on)= 140mΩ(Max.) @VGS= 10 V, ID= 10.5A

• Low gate charge ( Typ. 27nC)

• Low Crss( Typ. 30pF)

• 100% avalanche tested

• Low level gate drive requirement allowing direct operation from logic drivers

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.