Discrete Semiconductor Products

FQB19N20LTM

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ON Semiconductor

POWER MOSFET, N-CHANNEL, LOGIC LEVEL, QFET®, 200 V, 21 A, 140 MΩ, D2PAK

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet +1

Discrete Semiconductor Products

FQB19N20LTM

Active

ON Semiconductor

POWER MOSFET, N-CHANNEL, LOGIC LEVEL, QFET®, 200 V, 21 A, 140 MΩ, D2PAK

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQB19N20LTM

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	140 W
Power Dissipation (Max)	3.13 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

FQB19N20L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 21 A, 140 mΩ, D2PAK

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FQB19N20LTM	Surface Mount	140 mOhm	10 V	5 V	N-Channel	200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	21 A	35 nC	140 W	3.13 W	2200 pF	20 V	-55 °C	150 °C	TO-263 (D2PAK)	2 V	MOSFET (Metal Oxide)
ON Semiconductor FQB19N20TM	Surface Mount				N-Channel	200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	19.4 A	40 nC	140 W	3.13 W	1600 pF	30 V	-55 °C	150 °C	TO-263 (D2PAK)	5 V	MOSFET (Metal Oxide)	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	800	$ 0.69
Digikey	Cut Tape (CT)	1	$ 2.36
		10	$ 1.52
		100	$ 1.04
	Digi-Reel®	1	$ 2.36
		10	$ 1.52
		100	$ 1.04
	Tape & Reel (TR)	800	$ 0.78
		1600	$ 0.72
		2400	$ 0.69
		4000	$ 0.68
Newark	Each (Supplied on Cut Tape)	1	$ 2.09
		10	$ 1.76
		25	$ 1.62
		50	$ 1.50
		100	$ 1.36
		250	$ 1.36
ON Semiconductor	N/A	1	$ 0.73

Description

General part information

FQB19N20L Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-418AJ-D2PAK-3 (TO-263, 3-LEAD)

Package Drawing