STS1NK60Z
ActiveN-CHANNEL 600 V, 13 OHM TYP., 0.25 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN SO-8 PACKAGE
STS1NK60Z
ActiveN-CHANNEL 600 V, 13 OHM TYP., 0.25 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN SO-8 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STS1NK60Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 250 mA |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 94 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Power Dissipation (Max) | 2 W |
| Rds On (Max) @ Id, Vgs | 15 Ohm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1781 | $ 0.37 | |
Description
General part information
STS1NK60Z Series
The SuperMESHTMseries is obtained through an extreme optimization of STs well established stripbased PowerMESHTMlayout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTMproducts.
Documents
Technical documentation and resources