STS1NK60Z Series

N-channel 600 V, 13 Ohm typ., 0.25 A Zener-protected SuperMESH(TM) Power MOSFET in SO-8 package

Catalog

N-channel 600 V, 13 Ohm typ., 0.25 A Zener-protected SuperMESH(TM) Power MOSFET in SO-8 package

Part	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STS1NK60Z	MOSFET (Metal Oxide)	8-SOIC	600 V	6.9 nC	30 V	N-Channel	2 W	10 V	4.5 V	150 °C	-55 °C	250 mA	Surface Mount	0.154 in	8-SOIC	3.9 mm	15 Ohm	94 pF

Catalog

N-channel 600 V, 13 Ohm typ., 0.25 A Zener-protected SuperMESH(TM) Power MOSFET in SO-8 package

Description

The SuperMESHTMseries is obtained through an extreme optimization of STs well established stripbased PowerMESHTMlayout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTMproducts.