Discrete Semiconductor Products

STH2N120K5-2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 1200 V, 7.25 OHM TYP., 1.5 A MDMESH K5 POWER MOSFET IN AN H2PAK-2 PACKAGE

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DocumentsSTH2N120K5-2AG | Datasheet +16

Discrete Semiconductor Products

STH2N120K5-2AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 1200 V, 7.25 OHM TYP., 1.5 A MDMESH K5 POWER MOSFET IN AN H2PAK-2 PACKAGE

Deep-Dive with AI

DocumentsSTH2N120K5-2AG | Datasheet +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STH2N120K5-2AG

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	124 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	60 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	10 Ohm
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

STH2N120K5-2AG Series

Automotive-grade N-channel 1200 V, 7.25 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Qualification	Technology	Supplier Device Package	Mounting Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STH2N120K5-2AG	4 V	10 V	60 W	1.5 A	AEC-Q101	MOSFET (Metal Oxide)	H2Pak-2	Surface Mount	30 V	150 °C	-55 °C	Automotive	5.3 nC	10 Ohm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	1.2 kV	124 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3129	$ 5.26

Description

General part information

STH2N120K5-2AG Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.