Discrete Semiconductor Products

FDS4935BZ

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ON Semiconductor

DUAL -30V P-CHANNEL POWERTRENCH® MOSFET -6.9A 22MΩ

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DocumentsProduct Change Notice EN Datasheet +1

Discrete Semiconductor Products

FDS4935BZ

Active

ON Semiconductor

DUAL -30V P-CHANNEL POWERTRENCH® MOSFET -6.9A 22MΩ

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS4935BZ

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	6.9 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1360 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDS4935BZ Series

Dual P-Channel PowerTrench® MOSFET,- 30V, -7A, 23mΩ

Part	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Configuration	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Feature	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDS4953	8-SOIC	Surface Mount	55 mOhm	30 V	2 P-Channel	900 mW	9 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-SOIC	3.9 mm	0.154 in	3 V	5 A	Logic Level Gate	528 pF
ON Semiconductor FDS4935A	8-SOIC	Surface Mount	23 mOhm	30 V	2 P-Channel	900 mW	21 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-SOIC	3.9 mm	0.154 in	3 V	7 A	Logic Level Gate	1233 pF
ON Semiconductor FDS4935BZ	8-SOIC	Surface Mount	22 mOhm	30 V	2 P-Channel	900 mW	40 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	3 V	6.9 A	Logic Level Gate	1360 pF
ON Semiconductor FDS4935	8-SOIC	Surface Mount	23 mOhm	30 V	2 P-Channel	2 W	21 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-SOIC	3.9 mm	0.154 in	3 V	7 A	Logic Level Gate	1233 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.47
		10	$ 0.93
		100	$ 0.62
		500	$ 0.48
		1000	$ 0.44
	Digi-Reel®	1	$ 1.47
		10	$ 0.93
		100	$ 0.62
		500	$ 0.48
		1000	$ 0.44
	Tape & Reel (TR)	2500	$ 0.39
		5000	$ 0.37
		7500	$ 0.35
		12500	$ 0.34
Newark	Each (Supplied on Full Reel)	2500	$ 0.41
		5000	$ 0.40
ON Semiconductor	N/A	1	$ 0.36

Description

General part information

FDS4935BZ Series

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-751EB-SOIC8

Package Drawing