FDS4935BZ Series

Dual P-Channel PowerTrench® MOSFET,- 30V, -7A, 23mΩ

Catalog

Dual P-Channel PowerTrench® MOSFET,- 30V, -7A, 23mΩ

Part	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Configuration	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Feature	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDS4953	8-SOIC	Surface Mount	55 mOhm	30 V	2 P-Channel	900 mW	9 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-SOIC	3.9 mm	0.154 in	3 V	5 A	Logic Level Gate	528 pF
ON Semiconductor FDS4935A	8-SOIC	Surface Mount	23 mOhm	30 V	2 P-Channel	900 mW	21 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-SOIC	3.9 mm	0.154 in	3 V	7 A	Logic Level Gate	1233 pF
ON Semiconductor FDS4935BZ	8-SOIC	Surface Mount	22 mOhm	30 V	2 P-Channel	900 mW	40 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	3 V	6.9 A	Logic Level Gate	1360 pF
ON Semiconductor FDS4935	8-SOIC	Surface Mount	23 mOhm	30 V	2 P-Channel	2 W	21 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-SOIC	3.9 mm	0.154 in	3 V	7 A	Logic Level Gate	1233 pF

Catalog

Dual P-Channel PowerTrench® MOSFET,- 30V, -7A, 23mΩ

Key Features

• –6.9 A, –30 V

• RDS(ON)= 22 mΩ @ VGS= –10 V

• RDS(ON)= 35 m @ VGS= – 4.5 V

• Extended VGSSrange (–25V) for battery applications

• ESD protection diode (note 3)

• High performance trench technology for extremelylow RDS(ON)

• High power and current handling capability

Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.