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8-SOIC
Discrete Semiconductor Products

FDS4935

Obsolete
ON Semiconductor

MOSFET 2P-CH 30V 7A 8SOIC

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8-SOIC
Discrete Semiconductor Products

FDS4935

Obsolete
ON Semiconductor

MOSFET 2P-CH 30V 7A 8SOIC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS4935
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C7 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs21 nC
Input Capacitance (Ciss) (Max) @ Vds1233 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]2 W
Rds On (Max) @ Id, Vgs23 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

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Description

General part information

FDS4935BZ Series

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Documents

Technical documentation and resources