Discrete Semiconductor Products

APT34N80B2C3G

Obsolete

MOSFET N-CH 800V 34A T-MAX

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 800V 34A T-MAX

Technical Specifications

Parameters and characteristics for this part

Specification	APT34N80B2C3G

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	355 nC
Input Capacitance (Ciss) (Max) @ Vds	4510 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max) [Max]	417 W
Rds On (Max) @ Id, Vgs	145 mOhm
Supplier Device Package	T-MAX™ [B2]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Package / Case	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Microchip Technology APT34N80B2C3G	TO-247-3 Variant	MOSFET (Metal Oxide)	T-MAX™ [B2]	3.9 V	10 V	800 V	-55 °C	150 °C	145 mOhm	417 W	20 V	34 A	Through Hole	N-Channel	4510 pF	355 nC
Microchip Technology APT34N80LC3G	TO-264-3 TO-264AA	MOSFET (Metal Oxide)	TO-264 [L]	3.9 V	10 V	800 V	-55 °C	150 °C	145 mOhm	417 W	20 V	34 A	Through Hole	N-Channel	4510 pF	355 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2]

Technical documentation and resources