APT34N80 Series

Catalog

MOSFET N-CH 800V 34A T-MAX

Part	Package / Case	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Microchip Technology APT34N80B2C3G	TO-247-3 Variant	MOSFET (Metal Oxide)	T-MAX™ [B2]	3.9 V	10 V	800 V	-55 °C	150 °C	145 mOhm	417 W	20 V	34 A	Through Hole	N-Channel	4510 pF	355 nC
Microchip Technology APT34N80LC3G	TO-264-3 TO-264AA	MOSFET (Metal Oxide)	TO-264 [L]	3.9 V	10 V	800 V	-55 °C	150 °C	145 mOhm	417 W	20 V	34 A	Through Hole	N-Channel	4510 pF	355 nC