Discrete Semiconductor Products

G60N04D52

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MOSFET 40V 35A 8DFN

Discrete Semiconductor Products

Active

MOSFET 40V 35A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	G60N04D52

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Max)	27 nC
Input Capacitance (Ciss) (Max)	1998 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	4.9 mm
Package Name	8-DFN
Package Width	5.75 mm
Power - Max (Tc)	20 W
Rds On (Max)	9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

Part	Rds On (Max)	Package / Case	Package Length	Package Name	Package Width	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) (Tc)	Mounting Type	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Power - Max (Tc)	Vgs(th) (Max)
Goford Semiconductor G60N04D52	9 mOhm	8-PowerTDFN	4.9 mm	8-DFN	5.75 mm	40 V	MOSFET (Metal Oxide)	35 A	Surface Mount	1998 pF	-55 °C	150 °C	27 nC	20 W	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Mosfet Array 40V 35A (Tc) 20W (Tc) Surface Mount 8-DFN (4.9x5.75)

Technical documentation and resources