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STMICROELECTRONICS M95128-DRMN3TP/K
Integrated Circuits (ICs)

MIC4422YM

Active
Microchip Technology

HIGH SPEED, 9A LOW SIDE MOSFET DRIVER

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STMICROELECTRONICS M95128-DRMN3TP/K
Integrated Circuits (ICs)

MIC4422YM

Active
Microchip Technology

HIGH SPEED, 9A LOW SIDE MOSFET DRIVER

Technical Specifications

Parameters and characteristics for this part

SpecificationMIC4422YM
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]9 A
Current - Peak Output (Source, Sink) [custom]9 A
Driven ConfigurationLow-Side
Gate TypeN-Channel MOSFET, IGBT
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]20 ns
Rise / Fall Time (Typ) [custom]24 ns
Supplier Device Package8-SOIC
Voltage - Supply [Max]18 V
Voltage - Supply [Min]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.61
25$ 2.16
100$ 1.96
Microchip DirectTUBE 1$ 2.61
25$ 2.16
100$ 1.96
1000$ 1.65
5000$ 1.51
10000$ 1.39
NewarkEach 1$ 2.71
10$ 2.49
25$ 2.25
50$ 2.14
190$ 2.04

Description

General part information

MIC4422A Series

MIC4421A and MIC4422A MOSFET gate drivers are rugged, efficient, and easy to use. The MIC4421A is an inverting driver, while the MIC4422A is a non-inverting driver. Both versions are capable of 9A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4421A/4422A accepts any logic input from 2.4 V to VS without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5 V without damaging the part. Additional circuits protect against damage from electrostatic discharge. MIC4421A/4422A gate drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost. Modern Bipolar/CMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability of CMOS/DMOS helps ensure adequate gate voltage to the MOSFET during power up/down sequencing. Since these devices are fabricated on a self-aligned process, they have very low crossover current, run cool, use little power, and are easy to drive.