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Technical Specifications
Parameters and characteristics for this part
| Specification | MIC4422YM |
|---|---|
| Channel Type | Single |
| Current - Peak Output (Source, Sink) [custom] | 9 A |
| Current - Peak Output (Source, Sink) [custom] | 9 A |
| Driven Configuration | Low-Side |
| Gate Type | N-Channel MOSFET, IGBT |
| Input Type | Non-Inverting |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 20 ns |
| Rise / Fall Time (Typ) [custom] | 24 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 18 V |
| Voltage - Supply [Min] | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.61 | |
| 25 | $ 2.16 | |||
| 100 | $ 1.96 | |||
| Microchip Direct | TUBE | 1 | $ 2.61 | |
| 25 | $ 2.16 | |||
| 100 | $ 1.96 | |||
| 1000 | $ 1.65 | |||
| 5000 | $ 1.51 | |||
| 10000 | $ 1.39 | |||
| Newark | Each | 1 | $ 2.71 | |
| 10 | $ 2.49 | |||
| 25 | $ 2.25 | |||
| 50 | $ 2.14 | |||
| 190 | $ 2.04 | |||
Description
General part information
MIC4422A Series
MIC4421A and MIC4422A MOSFET gate drivers are rugged, efficient, and easy to use. The MIC4421A is an inverting driver, while the MIC4422A is a non-inverting driver. Both versions are capable of 9A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4421A/4422A accepts any logic input from 2.4 V to VS without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5 V without damaging the part. Additional circuits protect against damage from electrostatic discharge. MIC4421A/4422A gate drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost. Modern Bipolar/CMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability of CMOS/DMOS helps ensure adequate gate voltage to the MOSFET during power up/down sequencing. Since these devices are fabricated on a self-aligned process, they have very low crossover current, run cool, use little power, and are easy to drive.