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PDIP / 8
Integrated Circuits (ICs)

MIC4422ZN

Active
Microchip Technology

9A LOW SIDE SINGLE NON-INV GATE DRVR, PDIP-8 8 PDIP .300IN TUBE ROHS COMPLIANT: YES

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PDIP / 8
Integrated Circuits (ICs)

MIC4422ZN

Active
Microchip Technology

9A LOW SIDE SINGLE NON-INV GATE DRVR, PDIP-8 8 PDIP .300IN TUBE ROHS COMPLIANT: YES

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Technical Specifications

Parameters and characteristics for this part

SpecificationMIC4422ZN
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]9 A
Current - Peak Output (Source, Sink) [custom]9 A
Driven ConfigurationLow-Side
Gate TypeN-Channel MOSFET, IGBT
Input TypeNon-Inverting
Mounting TypeThrough Hole
Number of Drivers1
Operating Temperature [Max]150 °C
Operating Temperature [Min]0 °C
Package / Case0.3 in
Package / Case8-DIP
Package / Case7.62 mm
Rise / Fall Time (Typ) [custom]20 ns
Rise / Fall Time (Typ) [custom]24 ns
Supplier Device Package8-PDIP
Voltage - Supply [Max]18 V
Voltage - Supply [Min]4.5 V

MIC4422A Series

9 A Non-Inverting Peak Low Side MOSFET Driver

PartNumber of DriversGate TypeRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Voltage - Supply [Max]Voltage - Supply [Min]Operating Temperature [Min]Operating Temperature [Max]Driven ConfigurationLogic Voltage - VIL, VIHCurrent - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Package / CasePackage / Case [y]Package / Case [x]Channel TypeMounting TypeSupplier Device PackageInput TypePackage / CasePackage / Case
SOIC / 8
Microchip Technology
1
N-Channel MOSFET
20 ns
24 ns
18 V
4.5 V
0 °C
150 °C
Low-Side
0.8 V
3 V
9 A
9 A
8-SOIC
3.9 mm
0.154 in
Single
Surface Mount
8-SOIC
Non-Inverting
8-SOIC
Microchip Technology
1
IGBT
N-Channel MOSFET
20 ns
24 ns
18 V
4.5 V
0 °C
150 °C
Low-Side
9 A
9 A
8-SOIC
3.9 mm
0.154 in
Single
Surface Mount
8-SOIC
Non-Inverting
TO-220-5
Microchip Technology
1
IGBT
N-Channel MOSFET
20 ns
24 ns
18 V
4.5 V
0 °C
150 °C
Low-Side
9 A
9 A
TO-220-5
Single
Through Hole
TO-220-5
Non-Inverting
8-SOIC
Microchip Technology
1
N-Channel MOSFET
20 ns
24 ns
18 V
4.5 V
-55 °C
150 °C
Low-Side
0.8 V
3 V
9 A
9 A
8-SOIC
3.9 mm
0.154 in
Single
Surface Mount
8-SOIC
Non-Inverting
STMICROELECTRONICS M95128-DRMN3TP/K
Microchip Technology
1
IGBT
N-Channel MOSFET
20 ns
24 ns
18 V
4.5 V
-40 °C
150 °C
Low-Side
9 A
9 A
8-SOIC
3.9 mm
0.154 in
Single
Surface Mount
8-SOIC
Non-Inverting
TO-220-5
Microchip Technology
1
N-Channel MOSFET
20 ns
24 ns
18 V
4.5 V
0 °C
150 °C
Low-Side
0.8 V
3 V
9 A
9 A
TO-220-5
Single
Through Hole
TO-220-5
Non-Inverting
PDIP / 8
Microchip Technology
1
IGBT
N-Channel MOSFET
20 ns
24 ns
18 V
4.5 V
-40 °C
150 °C
Low-Side
9 A
9 A
8-DIP
Single
Through Hole
8-PDIP
Non-Inverting
0.3 in
7.62 mm
8-DIP
Microchip Technology
1
N-Channel MOSFET
20 ns
24 ns
18 V
4.5 V
0 °C
150 °C
Low-Side
0.8 V
3 V
9 A
9 A
8-DIP
Single
Through Hole
8-PDIP
Non-Inverting
0.3 in
7.62 mm
TO-220-5
Microchip Technology
1
IGBT
N-Channel MOSFET
20 ns
24 ns
18 V
4.5 V
0 °C
150 °C
Low-Side
9 A
9 A
TO-220-5
Single
Through Hole
TO-220-5
Non-Inverting
PDIP / 8
Microchip Technology
1
IGBT
N-Channel MOSFET
20 ns
24 ns
18 V
4.5 V
0 °C
150 °C
Low-Side
9 A
9 A
8-DIP
Single
Through Hole
8-PDIP
Non-Inverting
0.3 in
7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.21
25$ 2.68
100$ 2.44
Microchip DirectTUBE 1$ 3.21
25$ 2.68
100$ 2.44
1000$ 2.03
5000$ 1.88
10000$ 1.74
NewarkEach 100$ 2.52

Description

General part information

MIC4422A Series

MIC4421A and MIC4422A MOSFET gate drivers are rugged, efficient, and easy to use. The MIC4421A is an inverting driver, while the MIC4422A is a non-inverting driver. Both versions are capable of 9A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4421A/4422A accepts any logic input from 2.4 V to VS without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5 V without damaging the part. Additional circuits protect against damage from electrostatic discharge. MIC4421A/4422A gate drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost. Modern Bipolar/CMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability of CMOS/DMOS helps ensure adequate gate voltage to the MOSFET during power up/down sequencing. Since these devices are fabricated on a self-aligned process, they have very low crossover current, run cool, use little power, and are easy to drive.