Integrated Circuits (ICs)

SST25VF080B-80-4I-QAE-T

Obsolete

Microchip Technology

IC,SERIAL EEPROM,NOR FLASH,1MX8,CMOS,LLCC,8PIN,PLASTIC

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Integrated Circuits (ICs)

SST25VF080B-80-4I-QAE-T

Obsolete

Microchip Technology

IC,SERIAL EEPROM,NOR FLASH,1MX8,CMOS,LLCC,8PIN,PLASTIC

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SST25VF080B-80-4I-QAE-T

Clock Frequency	80 MHz
Memory Format	FLASH
Memory Interface	SPI
Memory Organization [custom]	1 M
Memory Organization [custom]	8 bits
Memory Size	1024 KB
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-WDFN Exposed Pad
Supplier Device Package	8-WSON
Technology	FLASH
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page	10 µs

SST25VF080B Series

8Mb 2.7-3.6V SPI Serial Flash

Part	Technology	Memory Format	Memory Type	Package / Case [y]	Package / Case	Package / Case [x]	Clock Frequency	Memory Organization [custom]	Memory Organization [custom]	Supplier Device Package	Write Cycle Time - Word, Page	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Interface	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Memory Size
Microchip Technology SST25VF080B-50-4C-S2AF-T	FLASH	FLASH	Non-Volatile	5.3 mm	8-SOIC	0.209 "	50 MHz	1 M	8 bits	8-SOIC	10 µs	2.7 V	3.6 V	SPI	70 °C	0 °C	Surface Mount	1024 KB
Microchip Technology SST25VF080B-50-4I-QAF-T	FLASH	FLASH	Non-Volatile		8-WDFN Exposed Pad		50 MHz	1 M	8 bits	8-WSON (6x5)	10 µs	2.7 V	3.6 V	SPI	85 °C	-40 °C	Surface Mount	1024 KB
Microchip Technology SST25VF080B-50-4I-QAF	FLASH	FLASH	Non-Volatile		8-WDFN Exposed Pad		50 MHz	1 M	8 bits	8-WSON (6x5)	10 µs	2.7 V	3.6 V	SPI	85 °C	-40 °C	Surface Mount	1024 KB
Microchip Technology SST25VF080B-50-4I-S2AF	FLASH	FLASH	Non-Volatile	5.3 mm	8-SOIC	0.209 "	50 MHz	1 M	8 bits	8-SOIC	10 µs	2.7 V	3.6 V	SPI	85 °C	-40 °C	Surface Mount	1024 KB
Microchip Technology SST25VF080B-50-4C-S2AF	FLASH	FLASH	Non-Volatile	5.3 mm	8-SOIC	0.209 "	50 MHz	1 M	8 bits	8-SOIC	10 µs	2.7 V	3.6 V	SPI	70 °C	0 °C	Surface Mount	1024 KB
Microchip Technology SST25VF080B-80-4I-QAE-T	FLASH	FLASH	Non-Volatile		8-WDFN Exposed Pad		80 MHz	1 M	8 bits	8-WSON	10 µs	2.7 V	3.6 V	SPI	85 °C	-40 °C	Surface Mount	1024 KB
Microchip Technology SST25VF080B-50-4I-S2AE-T	FLASH	FLASH	Non-Volatile	5.3 mm	8-SOIC	0.209 "	50 MHz	1 M	8 bits	8-SOIC	10 µs	2.7 V	3.6 V	SPI	85 °C	-40 °C	Surface Mount	1024 KB
Microchip Technology SST25VF080B-50-4I-QAE-T	FLASH	FLASH	Non-Volatile		8-WDFN Exposed Pad		50 MHz	1 M	8 bits	8-WSON (6x5)	10 µs	2.7 V	3.6 V	SPI	85 °C	-40 °C	Surface Mount	1024 KB
Microchip Technology SST25VF080B-80-4I-SAE-T	FLASH	FLASH	Non-Volatile	3.9 mm	8-SOIC	0.154 in	80 MHz	1 M	8 bits	8-SOIC	10 µs	2.7 V	3.6 V	SPI	85 °C	-40 °C	Surface Mount	1024 KB
Microchip Technology SST25VF080B-80-4C-SAE	FLASH	FLASH	Non-Volatile	3.9 mm	8-SOIC	0.154 in	80 MHz	1 M	8 bits	8-SOIC	10 µs	2.7 V	3.6 V	SPI	70 °C	0 °C	Surface Mount	1024 KB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SST25VF080B Series

The SST25VF080B devices are enhanced with improved operating frequency for lower power consumption. SST25VF080B SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Documents

Technical documentation and resources