Specification	2N5114UB/TR

Current - Drain (Idss) @ Vds (Vgs=0) [diameter]	90 mA
Current - Drain (Idss) @ Vds (Vgs=0) [diameter]	18 V
Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Grade	Military
Input Capacitance (Ciss) (Max) @ Vds [Max]	25 pF
Mounting Type	Surface Mount
Package / Case	3-SMD, No Lead
Power - Max [Max]	500 mW
Qualification	MIL-PRF-19500
Resistance - RDS(On)	75 Ohms
Supplier Device Package	UB
Voltage - Breakdown (V(BR)GSS)	30 V
Voltage - Cutoff (VGS off) @ Id	10 V

2N5114UB-JFET-PChannel Series

Field Effect Transistor FET P-Channel -30V, -0.015A to -0.6A

Part	Package / Case	Supplier Device Package	Voltage - Cutoff (VGS off) @ Id	Qualification	Resistance - RDS(On)	Grade	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Drain (Idss) @ Vds (Vgs=0) [diameter]	Current - Drain (Idss) @ Vds (Vgs=0) [diameter]	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Voltage - Breakdown (V(BR)GSS)
Microchip Technology 2N5114UB	3-SMD No Lead	UB	10 V	MIL-PRF-19500	75 Ohms	Military	500 mW	25 pF	90 mA	18 V	Surface Mount	P-Channel	30 V	30 V
Microchip Technology 2N5114UB/TR	3-SMD No Lead	UB	10 V	MIL-PRF-19500	75 Ohms	Military	500 mW	25 pF	90 mA	18 V	Surface Mount	P-Channel	30 V	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	100	$ 53.99
Microchip Direct	N/A	1	$ 58.14
Newark	Each	100	$ 53.99
		500	$ 51.92

Description

General part information

2N5114UB-JFET-PChannel Series

This specification covers the performance requirements for P-channel, junction, silicon field-effect, 2N5114 Through 2N5116 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/476.

Documents

Technical documentation and resources

2N5114UB-2N5116UB

Data Sheets

Product Change Notice EN

Datasheet