2N5114UB-JFET-PChannel Series

Field Effect Transistor FET P-Channel -30V, -0.015A to -0.6A

Catalog

Field Effect Transistor FET P-Channel -30V, -0.015A to -0.6A

Part	Package / Case	Supplier Device Package	Voltage - Cutoff (VGS off) @ Id	Qualification	Resistance - RDS(On)	Grade	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Drain (Idss) @ Vds (Vgs=0) [diameter]	Current - Drain (Idss) @ Vds (Vgs=0) [diameter]	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Voltage - Breakdown (V(BR)GSS)
Microchip Technology 2N5114UB	3-SMD No Lead	UB	10 V	MIL-PRF-19500	75 Ohms	Military	500 mW	25 pF	90 mA	18 V	Surface Mount	P-Channel	30 V	30 V
Microchip Technology 2N5114UB/TR	3-SMD No Lead	UB	10 V	MIL-PRF-19500	75 Ohms	Military	500 mW	25 pF	90 mA	18 V	Surface Mount	P-Channel	30 V	30 V

Catalog

Field Effect Transistor FET P-Channel -30V, -0.015A to -0.6A

Key Features

- The device package outlines are as follows: similar to TO-18 and surface mount LCC3 UB for all encapsulated device types.

Description

This specification covers the performance requirements for P-channel, junction, silicon field-effect, 2N5114 Through 2N5116 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/476.