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Documents2N3739
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Documents2N3739
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV2N3739 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 25 hFE |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-66-2, TO-213AA |
| Power - Max [Max] | 20 W |
| Qualification | MIL-PRF-19500/402 |
| Supplier Device Package | TO-66 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic [Max] | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 182.00 | |
Description
General part information
JANTXV2N3739-Transistor Series
This specification covers the performance requirements for NPN, silicon, power 2N3739 transistors for use in particular power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/402.
Documents
Technical documentation and resources