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Technical Specifications
Parameters and characteristics for this part
| Specification | H11AG1M |
|---|---|
| Current - DC Forward (If) (Max) | 50 mA |
| Current - Output / Channel | 50 mA |
| Current Transfer Ratio (Min) [Min] | 100 % |
| Input Type | DC |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Operating Temperature [Max] | 100 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 6-DIP |
| Package / Case | 0.3 in |
| Package / Case | 7.62 mm |
| Supplier Device Package | 6-DIP |
| Turn On / Turn Off Time (Typ) | 5 µs |
| Vce Saturation (Max) [Max] | 400 mV |
| Voltage - Forward (Vf) (Typ) | 1.25 V |
| Voltage - Isolation | 4170 Vrms |
| Voltage - Output (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.16 | |
| 50 | $ 0.74 | |||
| 100 | $ 0.54 | |||
| 500 | $ 0.52 | |||
| Newark | Each | 1000 | $ 0.69 | |
| 2500 | $ 0.56 | |||
| 10000 | $ 0.54 | |||
| ON Semiconductor | N/A | 1 | $ 0.55 | |
Description
General part information
H11AG1M Series
The H11AG1M series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications
Documents
Technical documentation and resources
