H11AG1M Series

6-Pin DIP Phototransistor Output Optocoupler

Catalog

6-Pin DIP Phototransistor Output Optocoupler

Part	Current Transfer Ratio (Min) [Min]	Voltage - Output (Max) [Max]	Turn On / Turn Off Time (Typ)	Mounting Type	Supplier Device Package	Vce Saturation (Max) [Max]	Voltage - Isolation	Package / Case	Package / Case	Package / Case	Number of Channels	Current - DC Forward (If) (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Forward (Vf) (Typ)	Current - Output / Channel	Input Type
ON Semiconductor H11AG1M	100 %	30 V	5 µs	Through Hole	6-DIP	400 mV	4170 Vrms	6-DIP	0.3 in	7.62 mm	1	50 mA	100 °C	-40 °C	1.25 V	50 mA	DC
ON Semiconductor H11AG1VM	100 %	30 V	5 µs	Through Hole	6-DIP	400 mV	4170 Vrms	6-DIP	0.3 in	7.62 mm	1	50 mA	100 °C	-40 °C	1.25 V	50 mA	DC
ON Semiconductor H11AG1SR2M	100 %	30 V	5 µs	Surface Mount	6-SMD	400 mV	4170 Vrms	6-SMD Gull Wing			1	50 mA	100 °C	-40 °C	1.25 V	50 mA	DC

Catalog

6-Pin DIP Phototransistor Output Optocoupler

Key Features

• High efficiency low degradation liquid epitaxial IRED

• Logic level compatible, input and output currents, with CMOS and LS/TTL

• High DC current transfer ratio at low input currents (as low as 200µA)

• Underwriters Laboratory (UL) recognized File#E90700, Volume 2

• VDE approval available as a test option

• – Add option V (e.g., H11AG1VM)

Description

The H11AG1M series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications