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ONSEMI H11AA1VM
Isolators

H11AG1VM

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ON Semiconductor

OPTOCOUPLER DC-IN 1-CH TRANSISTOR WITH BASE DC-OUT 6-PIN PDIP BAG

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ONSEMI H11AA1VM
Isolators

H11AG1VM

Active
ON Semiconductor

OPTOCOUPLER DC-IN 1-CH TRANSISTOR WITH BASE DC-OUT 6-PIN PDIP BAG

Technical Specifications

Parameters and characteristics for this part

SpecificationH11AG1VM
Current - DC Forward (If) (Max)50 mA
Current - Output / Channel50 mA
Current Transfer Ratio (Min) [Min]100 %
Input TypeDC
Mounting TypeThrough Hole
Number of Channels1
Operating Temperature [Max]100 °C
Operating Temperature [Min]-40 °C
Package / Case6-DIP
Package / Case0.3 in
Package / Case7.62 mm
Supplier Device Package6-DIP
Turn On / Turn Off Time (Typ)5 µs
Vce Saturation (Max) [Max]400 mV
Voltage - Forward (Vf) (Typ)1.25 V
Voltage - Isolation4170 Vrms
Voltage - Output (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 676$ 0.44
NewarkEach 1000$ 0.51
2500$ 0.41
10000$ 0.40
ON SemiconductorN/A 1$ 0.41

Description

General part information

H11AG1M Series

The H11AG1M series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications