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STW36N60M6
Discrete Semiconductor Products

STW36N60M6

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STMicroelectronics

N-CHANNEL 600 V, 85 MOHM TYP., 30 A MDMESH M6 POWER MOSFET IN A TO-247 PACKAGE

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STW36N60M6
Discrete Semiconductor Products

STW36N60M6

Active
STMicroelectronics

N-CHANNEL 600 V, 85 MOHM TYP., 30 A MDMESH M6 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW36N60M6
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1960 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]208 W
Rds On (Max) @ Id, Vgs99 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 581$ 7.11
NewarkEach 1$ 6.52
10$ 6.48
25$ 5.11
50$ 4.96
100$ 4.80
250$ 4.61

Description

General part information

STW36N60M6 Series

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)* area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources