STW36N60M6 Series

N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-247 package

Catalog

N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-247 package

Part	Supplier Device Package	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max) [Max]	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STW36N60M6	TO-247-3	N-Channel	TO-247-3	30 A	25 V	99 mOhm	10 V	44.3 nC	MOSFET (Metal Oxide)	208 W	Through Hole	4.75 V	600 V	150 °C	-55 °C	1960 pF

Catalog

N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-247 package

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)* area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.