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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5151U3 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 30 |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 1.16 W |
| Supplier Device Package | U3 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic [Max] | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 83.92 | |
| Microchip Direct | N/A | 1 | $ 90.36 | |
| Newark | Each | 100 | $ 83.90 | |
| 500 | $ 80.68 | |||
Description
General part information
2N5151U3-Transistor Series
This specification covers the performance requirements for PNP, silicon, power, 2N5151 and 2N5153 transistors, complimentary to the 2N5152 and 2N5154 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/545 and Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/545. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L," "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels.
Documents
Technical documentation and resources