2N5151U3-Transistor Series

PNP Silicon Power -80V, -2A

Catalog

PNP Silicon Power -80V, -2A

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Supplier Device Package
Microchip Technology 2N5151U3	2 A	1.16 W	1 mA	80 V	Surface Mount	1.5 V	PNP	30	3-SMD No Lead	U3

Catalog

PNP Silicon Power -80V, -2A

Key Features

- The device package outlines are as follows: similar to TO-205 and and surfacemount U3 for all encapsulated device types.

- The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/545.

Description

This specification covers the performance requirements for PNP, silicon, power, 2N5151 and 2N5153 transistors, complimentary to the 2N5152 and 2N5154 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/545 and Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/545. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L," "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels.