Integrated Circuits (ICs)

IR2125S

Obsolete

INFINEON

IC GATE DRVR HIGH-SIDE 16SOIC

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DocumentsDatasheet

Integrated Circuits (ICs)

IR2125S

Obsolete

INFINEON

IC GATE DRVR HIGH-SIDE 16SOIC

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2125S

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	3.3 A
Current - Peak Output (Source, Sink) [custom]	1.6 A
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	500 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 2.2 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	16-SOIC
Package / Case	7.5 mm
Package / Case	0.295 "
Rise / Fall Time (Typ) [custom]	43 ns
Rise / Fall Time (Typ) [custom]	26 ns
Supplier Device Package	16-SOIC
Voltage - Supply [Max]	18 V
Voltage - Supply [Min]	0 V

IR2125 Series

Part	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Channel Type	Input Type	Package / Case	Supplier Device Package	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Number of Drivers	Package / Case	Package / Case
INFINEON IR2125	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Through Hole	Single	Non-Inverting	8-DIP (0.300" 7.62mm)	8-PDIP	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1
INFINEON IR2125PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Through Hole	Single	Non-Inverting	8-DIP (0.300" 7.62mm)	8-PDIP	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1
INFINEON IR2125STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "
INFINEON IR2125S	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "
INFINEON IR2125SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "
INFINEON IR2125SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "
INFINEON IR2125STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

IR2125 Series

High-Side Gate Driver IC Non-Inverting 16-SOIC

Documents

Technical documentation and resources