Specification	IR2125PBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	3.3 A
Current - Peak Output (Source, Sink) [custom]	1.6 A
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	500 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 2.2 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]	43 ns
Rise / Fall Time (Typ) [custom]	26 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	18 V
Voltage - Supply [Min]	0 V

IR2125 Series

Part	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Channel Type	Input Type	Package / Case	Supplier Device Package	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Number of Drivers	Package / Case	Package / Case
INFINEON IR2125	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Through Hole	Single	Non-Inverting	8-DIP (0.300" 7.62mm)	8-PDIP	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1
INFINEON IR2125PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Through Hole	Single	Non-Inverting	8-DIP (0.300" 7.62mm)	8-PDIP	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1
INFINEON IR2125STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "
INFINEON IR2125S	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "
INFINEON IR2125SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "
INFINEON IR2125SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "
INFINEON IR2125STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1806	$ 3.69
	Tube	1	$ 3.91
		10	$ 3.51
		50	$ 3.32
		100	$ 2.88
		250	$ 2.73
		500	$ 2.45
		1000	$ 2.07
		2500	$ 1.96
		5000	$ 1.89
Newark	Each	1	$ 3.69
		10	$ 3.19
		50	$ 2.80
		100	$ 2.63
		500	$ 1.71
		1000	$ 1.69
		2500	$ 1.68
		5000	$ 1.65

Description

General part information

IR2125 Series

The IR2125PBF is a 1-channel high voltage high speed power MOSFET and IGBT Driver with over-current limiting protection circuitry. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs and down to 2.5V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle-by-cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shutdown. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 500V.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Application Note EN

Datasheet