IR2125 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HIGH-SIDE 8DIP

Part	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Channel Type	Input Type	Package / Case	Supplier Device Package	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Number of Drivers	Package / Case	Package / Case
INFINEON IR2125	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Through Hole	Single	Non-Inverting	8-DIP (0.300" 7.62mm)	8-PDIP	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1
INFINEON IR2125PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Through Hole	Single	Non-Inverting	8-DIP (0.300" 7.62mm)	8-PDIP	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1
INFINEON IR2125STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "
INFINEON IR2125S	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "
INFINEON IR2125SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "
INFINEON IR2125SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "
INFINEON IR2125STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	Non-Inverting	16-SOIC	16-SOIC	3.3 A	1.6 A	High-Side	0.8 V 2.2 V	500 V	1	7.5 mm	0.295 "