Discrete Semiconductor Products

PHD13005,127

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TRANS GP BJT NPN 400V 4A 75000MW 3-PIN(3+TAB) TO-220AB RAIL

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Discrete Semiconductor Products

Active

TRANS GP BJT NPN 400V 4A 75000MW 3-PIN(3+TAB) TO-220AB RAIL

Technical Specifications

Parameters and characteristics for this part

Specification	PHD13005,127

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	75 W
Supplier Device Package	TO-220AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

Part	Package / Case	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case
WeEn Semiconductors PHD13005,127	TO-220-3	TO-220AB	75 W	1 V	NPN	Through Hole	100 µA	10	4 A	150 °C	400 V
WeEn Semiconductors PHD13003C,126	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	TO-92-3	2.1 W		NPN	Through Hole	100 µA	5	1.5 A	150 °C	400 V
WeEn Semiconductors PHD13003C,412	TO-226-3 TO-92-3	TO-92-3	2.1 W		NPN	Through Hole	100 µA	5	1.5 A	150 °C	400 V	TO-226AA

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General part information

Bipolar (BJT) Transistor NPN 400 V 4 A 75 W Through Hole TO-220AB

Technical documentation and resources

No documents available