Discrete Semiconductor Products

PHD13003C,126

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BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 1.5 A, 2.1 W, TO-92, THROUGH HOLE

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Discrete Semiconductor Products

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BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 1.5 A, 2.1 W, TO-92, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	PHD13003C,126

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	2.1 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

Part	Package / Case	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case
WeEn Semiconductors PHD13005,127	TO-220-3	TO-220AB	75 W	1 V	NPN	Through Hole	100 µA	10	4 A	150 °C	400 V
WeEn Semiconductors PHD13003C,126	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	TO-92-3	2.1 W		NPN	Through Hole	100 µA	5	1.5 A	150 °C	400 V
WeEn Semiconductors PHD13003C,412	TO-226-3 TO-92-3	TO-92-3	2.1 W		NPN	Through Hole	100 µA	5	1.5 A	150 °C	400 V	TO-226AA

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General part information

Bipolar (BJT) Transistor NPN 400 V 1.5 A 2.1 W Through Hole TO-92-3

Technical documentation and resources

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