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FF2MR12KM1HPHPSA1
Discrete Semiconductor Products

FF2MR12KM1HPHPSA1

Active
INFINEON

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 350 A, 1.2 KV, 0.00196 OHM, MODULE

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FF2MR12KM1HPHPSA1
Discrete Semiconductor Products

FF2MR12KM1HPHPSA1

Active
INFINEON

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 350 A, 1.2 KV, 0.00196 OHM, MODULE

Technical Specifications

Parameters and characteristics for this part

SpecificationFF2MR12KM1HPHPSA1
Configuration2 N-Channel
Current - Continuous Drain (Id) @ 25°C500 A
Drain to Source Voltage (Vdss)1.2 kV
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs1340 nC
Input Capacitance (Ciss) (Max) @ Vds39700 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseModule
Rds On (Max) @ Id, Vgs2.13 mOhm
Supplier Device PackageAG-62MMHB
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id5.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 8$ 382.31
MouserN/A 1$ 431.52
NewarkEach 1$ 448.78

Description

General part information

M1H Series

62 mmCoolSiC™ MOSFEThalf bridge module 1200 V, 2.1 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-appliedThermal Interface Material(TIM).