
Discrete Semiconductor Products
FF2MR12KM1HPHPSA1
ActiveINFINEON
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 350 A, 1.2 KV, 0.00196 OHM, MODULE
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Discrete Semiconductor Products
FF2MR12KM1HPHPSA1
ActiveINFINEON
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 350 A, 1.2 KV, 0.00196 OHM, MODULE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FF2MR12KM1HPHPSA1 |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 1340 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 39700 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Module |
| Rds On (Max) @ Id, Vgs | 2.13 mOhm |
| Supplier Device Package | AG-62MMHB |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 5.15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
M1H Series
62 mmCoolSiC™ MOSFEThalf bridge module 1200 V, 2.1 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-appliedThermal Interface Material(TIM).
Documents
Technical documentation and resources