Specification	DF17MR12W1M1HFB68BPSA1

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4400 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	16.2 mOhm
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-7 V
Vgs(th) (Max) @ Id	5.15 V

M1H Series

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs (Max) [Min]	Vgs (Max) [Max]	Configuration	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]
INFINEON DF17MR12W1M1HFB68BPSA1	4400 pF	N-Channel	16.2 mOhm	5.15 V	Chassis Mount	1.2 kV	15 V 18 V	45 A	175 °C	-40 °C	Module	-7 V	20 V
INFINEON FS28MR12W1M1HB11HPSA1	2700 pF		26.4 mOhm	5.15 V	Chassis Mount	1.2 kV		30 A	175 °C	-40 °C	Module			6 N-Channel	AG-EASY1B	Silicon Carbide (SiC)	1200 V	90 nC	20 mW
INFINEON FF17MR12W1M1HB11BPSA1					Chassis Mount	1.2 kV					Module				AG-EASY1B	Silicon Carbide (SiC)	1200 V
INFINEON FF2MR12KM1HPHPSA1	39700 pF		2.13 mOhm	5.15 V	Chassis Mount	1.2 kV		500 A	150 °C	-40 °C	Module			2 N-Channel	AG-62MMHB	Silicon Carbide (SiC)	1200 V	1340 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

EasyPACK™ 1BCoolSiC™ MOSFET1200 V, 17 mΩ booster single MPPT module with enhanced generation 1, NTC andPressFIT Contact Technology.

Technical documentation and resources