Discrete Semiconductor Products

FS28MR12W1M1HB11HPSA1

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SILICON CARBIDE MOSFET, SIXPACK, N CHANNEL, 30 A, 1.2 KV, 0.0264 OHM, MODULE

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Discrete Semiconductor Products

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SILICON CARBIDE MOSFET, SIXPACK, N CHANNEL, 30 A, 1.2 KV, 0.0264 OHM, MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	FS28MR12W1M1HB11HPSA1

Configuration	6 N-Channel
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	90 nC
Input Capacitance (Ciss) (Max) @ Vds	2700 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	20 mW
Rds On (Max) @ Id, Vgs	26.4 mOhm
Supplier Device Package	AG-EASY1B
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.15 V

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs (Max) [Min]	Vgs (Max) [Max]	Configuration	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]
INFINEON DF17MR12W1M1HFB68BPSA1	4400 pF	N-Channel	16.2 mOhm	5.15 V	Chassis Mount	1.2 kV	15 V 18 V	45 A	175 °C	-40 °C	Module	-7 V	20 V
INFINEON FS28MR12W1M1HB11HPSA1	2700 pF		26.4 mOhm	5.15 V	Chassis Mount	1.2 kV		30 A	175 °C	-40 °C	Module			6 N-Channel	AG-EASY1B	Silicon Carbide (SiC)	1200 V	90 nC	20 mW
INFINEON FF17MR12W1M1HB11BPSA1					Chassis Mount	1.2 kV					Module				AG-EASY1B	Silicon Carbide (SiC)	1200 V
INFINEON FF2MR12KM1HPHPSA1	39700 pF		2.13 mOhm	5.15 V	Chassis Mount	1.2 kV		500 A	150 °C	-40 °C	Module			2 N-Channel	AG-62MMHB	Silicon Carbide (SiC)	1200 V	1340 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

EasyPACK™ 1BCoolSiC™ MOSFETsixpack module 1200 V, 28 mOhm withPressFitcontact technology.

Technical documentation and resources