Zenode.ai Logo
Beta
PG-TO251-3
Discrete Semiconductor Products

IPSA70R600CEAKMA1

Obsolete
INFINEON

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 700 V ; IPAK SL ISO-STANDOFF PACKAGE; 600 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

Search across all available documentation for this part.

PG-TO251-3
Discrete Semiconductor Products

IPSA70R600CEAKMA1

Obsolete
INFINEON

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 700 V ; IPAK SL ISO-STANDOFF PACKAGE; 600 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPSA70R600CEAKMA1
Current - Continuous Drain (Id) @ 25°C10.5 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]474 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)86 W
Rds On (Max) @ Id, Vgs600 mOhm
Supplier Device PackagePG-TO251-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V
PartPackage / CaseOperating Temperature [Min]Operating Temperature [Max]TechnologyMounting TypeFET TypePower Dissipation (Max) [Max]Drain to Source Voltage (Vdss)Rds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ Vds [Max]Vgs(th) (Max) @ IdVgs (Max)Supplier Device PackageCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ Vgs [Max]Drive Voltage (Max Rds On, Min Rds On)Power Dissipation (Max)Input Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ Vgs
IPAK
TO-251-3 Short Leads
TO-251AA
-40 °C
150 °C
MOSFET (Metal Oxide)
Through Hole
N-Channel
59.5 W
700 V
360 mOhm
517 pF
3.5 V
16 V
PG-TO251-3
12.5 A
16.4 nC
10 V
IPAK
TO-251-3 Short Leads
TO-251AA
-40 °C
150 °C
MOSFET (Metal Oxide)
Through Hole
N-Channel
700 V
600 mOhm
364 pF
3.5 V
16 V
PG-TO251-3
8.5 A
10.5 nC
10 V
43.1 W
IPAK
TO-251-3 Short Leads
TO-251AA
-40 °C
150 °C
MOSFET (Metal Oxide)
Through Hole
N-Channel
700 V
900 mOhm
211 pF
3.5 V
16 V
PG-TO251-3
6 A
6.8 nC
10 V
30.5 W
IPAK
TO-251-3 Short Leads
TO-251AA
-40 °C
150 °C
MOSFET (Metal Oxide)
Through Hole
N-Channel
700 V
2 Ohm
3.5 V
20 V
PG-TO251-3
4 A
7.8 nC
10 V
42 W
163 pF
IPAK
TO-251-3 Short Leads
TO-251AA
-40 °C
150 °C
MOSFET (Metal Oxide)
Through Hole
N-Channel
700 V
450 mOhm
3.5 V
16 V
PG-TO251-3
10 A
10 V
50 W
424 pF
13.1 nC
IPAK
TO-251-3 Short Leads
TO-251AA
-40 °C
150 °C
MOSFET (Metal Oxide)
Through Hole
N-Channel
700 V
1.4 Ohm
3.5 V
20 V
PG-TO251-3
5.4 A
10 V
53 W
225 pF
10.5 nC
IPAK
TO-251-3 Short Leads
TO-251AA
-40 °C
150 °C
MOSFET (Metal Oxide)
Through Hole
N-Channel
700 V
750 mOhm
306 pF
3.5 V
16 V
PG-TO251-3
6.5 A
10 V
34.7 W
8.3 nC
IPAK
TO-251-3 Short Leads
TO-251AA
-40 °C
150 °C
MOSFET (Metal Oxide)
Through Hole
N-Channel
700 V
600 mOhm
474 pF
3.5 V
20 V
PG-TO251-3
10.5 A
22 nC
10 V
86 W
TO-251-3 Stub Leads
IPAK
-40 °C
150 °C
MOSFET (Metal Oxide)
Through Hole
N-Channel
700 V
950 mOhm
3.5 V
20 V
PG-TO251-3-347
8.7 A
10 V
94 W
328 pF
15.3 nC
IPAK
TO-251-3 Short Leads
TO-251AA
-40 °C
150 °C
MOSFET (Metal Oxide)
Through Hole
N-Channel
700 V
1.2 Ohm
3.5 V
16 V
PG-TO251-3
4.5 A
10 V
25 W
174 pF
4.8 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.42
2967$ 0.42

Description

General part information

IPSA70 Series

CoolMOS™ CEis a technology platform of Infineon´s market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers600V, 650V and 700Vdevices targeting low power chargers for mobile devices and power tools,LCD,LED TVandLED lightingapplications.