
IPSA70R600CEAKMA1
ObsoleteCOOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 700 V ; IPAK SL ISO-STANDOFF PACKAGE; 600 MOHM; PRICE/PERFORMANCE
Deep-Dive with AI
Search across all available documentation for this part.

IPSA70R600CEAKMA1
ObsoleteCOOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 700 V ; IPAK SL ISO-STANDOFF PACKAGE; 600 MOHM; PRICE/PERFORMANCE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPSA70R600CEAKMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.5 A |
| Drain to Source Voltage (Vdss) | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 474 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) | 86 W |
| Rds On (Max) @ Id, Vgs | 600 mOhm |
| Supplier Device Package | PG-TO251-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
| Part | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Mounting Type | FET Type | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IPAK TO-251-3 Short Leads TO-251AA | -40 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | N-Channel | 59.5 W | 700 V | 360 mOhm | 517 pF | 3.5 V | 16 V | PG-TO251-3 | 12.5 A | 16.4 nC | 10 V | |||
INFINEON | IPAK TO-251-3 Short Leads TO-251AA | -40 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | N-Channel | 700 V | 600 mOhm | 364 pF | 3.5 V | 16 V | PG-TO251-3 | 8.5 A | 10.5 nC | 10 V | 43.1 W | |||
INFINEON | IPAK TO-251-3 Short Leads TO-251AA | -40 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | N-Channel | 700 V | 900 mOhm | 211 pF | 3.5 V | 16 V | PG-TO251-3 | 6 A | 6.8 nC | 10 V | 30.5 W | |||
INFINEON | IPAK TO-251-3 Short Leads TO-251AA | -40 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | N-Channel | 700 V | 2 Ohm | 3.5 V | 20 V | PG-TO251-3 | 4 A | 7.8 nC | 10 V | 42 W | 163 pF | |||
INFINEON | IPAK TO-251-3 Short Leads TO-251AA | -40 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | N-Channel | 700 V | 450 mOhm | 3.5 V | 16 V | PG-TO251-3 | 10 A | 10 V | 50 W | 424 pF | 13.1 nC | |||
INFINEON | IPAK TO-251-3 Short Leads TO-251AA | -40 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | N-Channel | 700 V | 1.4 Ohm | 3.5 V | 20 V | PG-TO251-3 | 5.4 A | 10 V | 53 W | 225 pF | 10.5 nC | |||
INFINEON | IPAK TO-251-3 Short Leads TO-251AA | -40 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | N-Channel | 700 V | 750 mOhm | 306 pF | 3.5 V | 16 V | PG-TO251-3 | 6.5 A | 10 V | 34.7 W | 8.3 nC | |||
INFINEON | IPAK TO-251-3 Short Leads TO-251AA | -40 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | N-Channel | 700 V | 600 mOhm | 474 pF | 3.5 V | 20 V | PG-TO251-3 | 10.5 A | 22 nC | 10 V | 86 W | |||
INFINEON | TO-251-3 Stub Leads IPAK | -40 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | N-Channel | 700 V | 950 mOhm | 3.5 V | 20 V | PG-TO251-3-347 | 8.7 A | 10 V | 94 W | 328 pF | 15.3 nC | |||
INFINEON | IPAK TO-251-3 Short Leads TO-251AA | -40 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | N-Channel | 700 V | 1.2 Ohm | 3.5 V | 16 V | PG-TO251-3 | 4.5 A | 10 V | 25 W | 174 pF | 4.8 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.42 | |
| 2967 | $ 0.42 | |||
Description
General part information
IPSA70 Series
CoolMOS™ CEis a technology platform of Infineon´s market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers600V, 650V and 700Vdevices targeting low power chargers for mobile devices and power tools,LCD,LED TVandLED lightingapplications.
Documents
Technical documentation and resources