Discrete Semiconductor Products

IPSA70R1K4CEAKMA1

Obsolete

INFINEON

MOSFET N-CH 700V 5.4A TO251-3

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Discrete Semiconductor Products

IPSA70R1K4CEAKMA1

Obsolete

INFINEON

MOSFET N-CH 700V 5.4A TO251-3

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPSA70R1K4CEAKMA1

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	225 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	53 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPSA70 Series

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	FET Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
INFINEON IPSA70R360P7SAKMA1	IPAK TO-251-3 Short Leads TO-251AA	-40 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	N-Channel	59.5 W	700 V	360 mOhm	517 pF	3.5 V	16 V	PG-TO251-3	12.5 A	16.4 nC	10 V
INFINEON IPSA70R600P7SAKMA1	IPAK TO-251-3 Short Leads TO-251AA	-40 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	N-Channel		700 V	600 mOhm	364 pF	3.5 V	16 V	PG-TO251-3	8.5 A	10.5 nC	10 V	43.1 W
INFINEON IPSA70R900P7SAKMA1	IPAK TO-251-3 Short Leads TO-251AA	-40 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	N-Channel		700 V	900 mOhm	211 pF	3.5 V	16 V	PG-TO251-3	6 A	6.8 nC	10 V	30.5 W
INFINEON IPSA70R2K0CEAKMA1	IPAK TO-251-3 Short Leads TO-251AA	-40 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	N-Channel		700 V	2 Ohm		3.5 V	20 V	PG-TO251-3	4 A	7.8 nC	10 V	42 W	163 pF
INFINEON IPSA70R450P7SAKMA1	IPAK TO-251-3 Short Leads TO-251AA	-40 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	N-Channel		700 V	450 mOhm		3.5 V	16 V	PG-TO251-3	10 A		10 V	50 W	424 pF	13.1 nC
INFINEON IPSA70R1K4CEAKMA1	IPAK TO-251-3 Short Leads TO-251AA	-40 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	N-Channel		700 V	1.4 Ohm		3.5 V	20 V	PG-TO251-3	5.4 A		10 V	53 W	225 pF	10.5 nC
INFINEON IPSA70R750P7SAKMA1	IPAK TO-251-3 Short Leads TO-251AA	-40 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	N-Channel		700 V	750 mOhm	306 pF	3.5 V	16 V	PG-TO251-3	6.5 A		10 V	34.7 W		8.3 nC
INFINEON IPSA70R600CEAKMA1	IPAK TO-251-3 Short Leads TO-251AA	-40 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	N-Channel		700 V	600 mOhm	474 pF	3.5 V	20 V	PG-TO251-3	10.5 A	22 nC	10 V	86 W
INFINEON IPSA70R950CEAKMA1	TO-251-3 Stub Leads IPAK	-40 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	N-Channel		700 V	950 mOhm		3.5 V	20 V	PG-TO251-3-347	8.7 A		10 V	94 W	328 pF	15.3 nC
INFINEON IPSA70R1K2P7SAKMA1	IPAK TO-251-3 Short Leads TO-251AA	-40 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	N-Channel		700 V	1.2 Ohm		3.5 V	16 V	PG-TO251-3	4.5 A		10 V	25 W	174 pF	4.8 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

IPSA70 Series

N-Channel 700 V 5.4A (Tc) 53W (Tc) Through Hole PG-TO251-3

Documents

Technical documentation and resources