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PG-TO251-3
Discrete Semiconductor Products

IPSA70R750P7SAKMA1

Obsolete
INFINEON

MOSFET N-CH 700V 6.5A TO251-3

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PG-TO251-3
Discrete Semiconductor Products

IPSA70R750P7SAKMA1

Obsolete
INFINEON

MOSFET N-CH 700V 6.5A TO251-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPSA70R750P7SAKMA1
Current - Continuous Drain (Id) @ 25°C6.5 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]306 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)34.7 W
Rds On (Max) @ Id, Vgs750 mOhm
Supplier Device PackagePG-TO251-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.33
2832$ 0.33
Tube 1500$ 0.33

Description

General part information

IPSA70 Series

N-Channel 700 V 6.5A (Tc) 34.7W (Tc) Through Hole PG-TO251-3

Documents

Technical documentation and resources