Specification	IRF9952TRPBF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2.3 A, 3.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

IRF995 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power - Max [Max]	Drain to Source Voltage (Vdss)	FET Feature	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Configuration	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
INFINEON IRF9956PBF	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Surface Mount	3.5 A	8-SO
INFINEON IRF9953PBF	12 nC	190 pF	2 W	30 V		0.154 in	8-SOIC	3.9 mm	250 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Surface Mount	2.3 A	8-SO
INFINEON IRF9952PBF	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	Surface Mount	2.3 A 3.5 A	8-SO
INFINEON IRF9953TRPBF	12 nC	190 pF	2 W	30 V		0.154 in	8-SOIC	3.9 mm	250 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Surface Mount	2.3 A	8-SO
INFINEON IRF9953TR	12 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	250 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Surface Mount	2.3 A	8-SO
INFINEON IRF9956TRPBF	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Surface Mount	3.5 A	8-SO
INFINEON IRF9952	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	Surface Mount	2.3 A 3.5 A	8-SO
INFINEON IRF9953	12 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	250 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Surface Mount	2.3 A	8-SO
INFINEON IRF9952TRPBF	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	Surface Mount	2.3 A 3.5 A	8-SO
INFINEON IRF9952TR	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	Surface Mount	2.3 A 3.5 A	8-SO

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.82
		10	$ 0.71
		100	$ 0.49
		500	$ 0.41
		1000	$ 0.35
		2000	$ 0.31
	Digi-Reel®	1	$ 0.82
		10	$ 0.71
		100	$ 0.49
		500	$ 0.41
		1000	$ 0.35
		2000	$ 0.31
	N/A	10292	$ 1.18
	Tape & Reel (TR)	4000	$ 0.31
		8000	$ 0.30
		12000	$ 0.27
		28000	$ 0.27
Newark	Each (Supplied on Cut Tape)	1	$ 0.63
		10	$ 0.63
		25	$ 0.58
		50	$ 0.54
		100	$ 0.49
		250	$ 0.44
		500	$ 0.39
		1000	$ 0.35

Description

General part information

IRF995 Series

Mosfet Array 30V 3.5A, 2.3A 2W Surface Mount 8-SO

Documents

Technical documentation and resources

IRF9952TRPBF

Deep-Dive with AI

IRF9952TRPBF

Deep-Dive with AI

Technical Specifications

IRF995 Series

Pricing

Description

IRF995 Series

Documents

Small Signal and Small Power MOSFETs selection guide

Data Sheet - IRF9952

FIT Report - IRF9952

IRF9952

Introduction to Infineon's Simulation Models: Power MOSFETs

Product Change Notice EN

Simulation Model EN

IR Part Numbering System

IRF995 Series