IRF995 Series

Manufacturer: INFINEON

Catalog

MOSFET 2N-CH 30V 3.5A 8SO

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power - Max [Max]	Drain to Source Voltage (Vdss)	FET Feature	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Configuration	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
INFINEON IRF9956PBF	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Surface Mount	3.5 A	8-SO
INFINEON IRF9953PBF	12 nC	190 pF	2 W	30 V		0.154 in	8-SOIC	3.9 mm	250 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Surface Mount	2.3 A	8-SO
INFINEON IRF9952PBF	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	Surface Mount	2.3 A 3.5 A	8-SO
INFINEON IRF9953TRPBF	12 nC	190 pF	2 W	30 V		0.154 in	8-SOIC	3.9 mm	250 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Surface Mount	2.3 A	8-SO
INFINEON IRF9953TR	12 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	250 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Surface Mount	2.3 A	8-SO
INFINEON IRF9956TRPBF	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Surface Mount	3.5 A	8-SO
INFINEON IRF9952	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	Surface Mount	2.3 A 3.5 A	8-SO
INFINEON IRF9953	12 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	250 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Surface Mount	2.3 A	8-SO
INFINEON IRF9952TRPBF	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	Surface Mount	2.3 A 3.5 A	8-SO
INFINEON IRF9952TR	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	Surface Mount	2.3 A 3.5 A	8-SO