Discrete Semiconductor Products

IRF9953TRPBF

Obsolete

INFINEON

IR MOSFET™ P+P DUAL ; SO-8 PACKAGE; 250 MOHM;

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DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRF9953TRPBF

Obsolete

INFINEON

IR MOSFET™ P+P DUAL ; SO-8 PACKAGE; 250 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9953TRPBF

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	2.3 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

IRF995 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power - Max [Max]	Drain to Source Voltage (Vdss)	FET Feature	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Configuration	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
INFINEON IRF9956PBF	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Surface Mount	3.5 A	8-SO
INFINEON IRF9953PBF	12 nC	190 pF	2 W	30 V		0.154 in	8-SOIC	3.9 mm	250 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Surface Mount	2.3 A	8-SO
INFINEON IRF9952PBF	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	Surface Mount	2.3 A 3.5 A	8-SO
INFINEON IRF9953TRPBF	12 nC	190 pF	2 W	30 V		0.154 in	8-SOIC	3.9 mm	250 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Surface Mount	2.3 A	8-SO
INFINEON IRF9953TR	12 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	250 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Surface Mount	2.3 A	8-SO
INFINEON IRF9956TRPBF	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Surface Mount	3.5 A	8-SO
INFINEON IRF9952	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	Surface Mount	2.3 A 3.5 A	8-SO
INFINEON IRF9953	12 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	250 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Surface Mount	2.3 A	8-SO
INFINEON IRF9952TRPBF	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	Surface Mount	2.3 A 3.5 A	8-SO
INFINEON IRF9952TR	14 nC	190 pF	2 W	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	100 mOhm	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	Surface Mount	2.3 A 3.5 A	8-SO

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

IRF995 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources