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Pkg 5547
Discrete Semiconductor Products

SI5475BDC-T1-E3

Obsolete

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Search across all available documentation for this part.

DocumentsDatasheet
Pkg 5547
Discrete Semiconductor Products

SI5475BDC-T1-E3

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI5475BDC-T1-E3
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds1400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)2.5 W, 6.3 W
Rds On (Max) @ Id, Vgs28 mOhm
Supplier Device Package1206-8 ChipFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SI5475 Series

P-Channel 12 V 6A (Ta) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™

Documents

Technical documentation and resources