SI5475 Series

Catalog

MOSFET P-CH 12V 5.5A 1206-8

Part	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SI5475DC-T1-GE3	31 mOhm	12 V	1206-8 ChipFET™	8 V	450 mV	MOSFET (Metal Oxide)	Surface Mount	29 nC	5.5 A	-55 °C	150 °C	1.3 W	P-Channel	1.8 V 4.5 V
Vishay General Semiconductor - Diodes Division SI5475DC-T1-E3	31 mOhm	12 V	1206-8 ChipFET™	8 V	450 mV	MOSFET (Metal Oxide)	Surface Mount	29 nC	5.5 A	-55 °C	150 °C	1.3 W	P-Channel	1.8 V 4.5 V
Vishay General Semiconductor - Diodes Division SI5475BDC-T1-E3		12 V	1206-8 ChipFET™	8 V	1 V	MOSFET (Metal Oxide)	Surface Mount		6 A	-55 °C	150 °C	2.5 W 6.3 W	P-Channel	1.8 V 4.5 V	1400 pF	28 mOhm	40 nC
Vishay General Semiconductor - Diodes Division SI5475DDC-T1-GE3		12 V	1206-8 ChipFET™	8 V	1 V	MOSFET (Metal Oxide)	Surface Mount	50 nC	6 A	-55 °C	150 °C	2.3 W 5.7 W	P-Channel	1.8 V 4.5 V		32 mOhm		1600 pF