
Discrete Semiconductor Products
SI5475DC-T1-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 12V 5.5A 1206-8
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Discrete Semiconductor Products
SI5475DC-T1-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 12V 5.5A 1206-8
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SI5475DC-T1-E3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 1.3 W |
| Rds On (Max) @ Id, Vgs [Max] | 31 mOhm |
| Supplier Device Package | 1206-8 ChipFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 450 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SI5475 Series
P-Channel 12 V 5.5A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Documents
Technical documentation and resources