Discrete Semiconductor Products
STB20NM50T4
ActiveSTMicroelectronics
N-CHANNEL 500 V, 200 MOHM TYP., 20 A MDMESH POWER MOSFET IN A D2PAK PACKAGE
Discrete Semiconductor Products
STB20NM50T4
ActiveSTMicroelectronics
N-CHANNEL 500 V, 200 MOHM TYP., 20 A MDMESH POWER MOSFET IN A D2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STB20NM50T4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 550 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 192 W |
| Rds On (Max) @ Id, Vgs | 250 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 431 | $ 6.39 | |
Description
General part information
STB20NM50 Series
The MDmesh™is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances.
Documents
Technical documentation and resources