STB20NM50 Series

N-channel 500 V, 200 mOhm typ., 20 A MDmesh Power MOSFET in a D2PAK package

Catalog

N-channel 500 V, 200 mOhm typ., 20 A MDmesh Power MOSFET in a D2PAK package

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type
STMicroelectronics STB20NM50T4	192 W	5 V	MOSFET (Metal Oxide)	150 °C	-65 °C	1480 pF	D2PAK	20 A	56 nC	550 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	N-Channel	10 V	250 mOhm	Surface Mount

Catalog

N-channel 500 V, 200 mOhm typ., 20 A MDmesh Power MOSFET in a D2PAK package

Description

The MDmesh™is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances.