Discrete Semiconductor Products

IPP120P04P4L03AKSA1

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MOSFET P-CH 40V 120A TO220-3

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Discrete Semiconductor Products

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MOSFET P-CH 40V 120A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP120P04P4L03AKSA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	234 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	15000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	136 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

Part	Qualification	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Grade	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
INFINEON IPP120N08S404AKSA1	AEC-Q101	MOSFET (Metal Oxide)	6450 pF	PG-TO220-3-1	N-Channel	175 °C	-55 °C	95 nC	4 V	4.4 mOhm	Through Hole	179 W	10 V	Automotive	80 V	20 V	TO-220-3	120 A
INFINEON IPP120N10S405AKSA1	AEC-Q101	MOSFET (Metal Oxide)	6540 pF	PG-TO220-3-1	N-Channel	175 °C	-55 °C	91 nC	3.5 V	5.3 mOhm	Through Hole	190 W	10 V	Automotive	100 V	20 V	TO-220-3	120 A
INFINEON IPP120N20NFDAKSA1		MOSFET (Metal Oxide)		PG-TO220-3	N-Channel	175 °C	-55 °C		4 V	12 mOhm	Through Hole	300 W	10 V		200 V	20 V	TO-220-3	84 A	6650 pF	87 nC
INFINEON IPP120P04P4L03AKSA1	AEC-Q101	MOSFET (Metal Oxide)	15000 pF	PG-TO220-3-1	P-Channel	175 °C	-55 °C		2.2 V	3.4 mOhm	Through Hole	136 W	4.5 V 10 V	Automotive	40 V	16 V	TO-220-3	120 A		234 nC
INFINEON IPP120N08S403AKSA1	AEC-Q101	MOSFET (Metal Oxide)		PG-TO220-3-1	N-Channel	175 °C	-55 °C	167 nC	4 V	2.8 mOhm	Through Hole		10 V	Automotive	80 V	20 V	TO-220-3	120 A	11550 pF		278 W
INFINEON IPP120N10S403AKSA1	AEC-Q101	MOSFET (Metal Oxide)		PG-TO220-3-1	N-Channel	175 °C	-55 °C		3.5 V	3.9 mOhm	Through Hole	250 W	10 V	Automotive	100 V	20 V	TO-220-3	120 A	10120 pF	140 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 120A (Tc) 136W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources