IPP120 Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 80V 120A TO220-3

Part	Qualification	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Grade	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
INFINEON IPP120N08S404AKSA1	AEC-Q101	MOSFET (Metal Oxide)	6450 pF	PG-TO220-3-1	N-Channel	175 °C	-55 °C	95 nC	4 V	4.4 mOhm	Through Hole	179 W	10 V	Automotive	80 V	20 V	TO-220-3	120 A
INFINEON IPP120N10S405AKSA1	AEC-Q101	MOSFET (Metal Oxide)	6540 pF	PG-TO220-3-1	N-Channel	175 °C	-55 °C	91 nC	3.5 V	5.3 mOhm	Through Hole	190 W	10 V	Automotive	100 V	20 V	TO-220-3	120 A
INFINEON IPP120N20NFDAKSA1		MOSFET (Metal Oxide)		PG-TO220-3	N-Channel	175 °C	-55 °C		4 V	12 mOhm	Through Hole	300 W	10 V		200 V	20 V	TO-220-3	84 A	6650 pF	87 nC
INFINEON IPP120P04P4L03AKSA1	AEC-Q101	MOSFET (Metal Oxide)	15000 pF	PG-TO220-3-1	P-Channel	175 °C	-55 °C		2.2 V	3.4 mOhm	Through Hole	136 W	4.5 V 10 V	Automotive	40 V	16 V	TO-220-3	120 A		234 nC
INFINEON IPP120N08S403AKSA1	AEC-Q101	MOSFET (Metal Oxide)		PG-TO220-3-1	N-Channel	175 °C	-55 °C	167 nC	4 V	2.8 mOhm	Through Hole		10 V	Automotive	80 V	20 V	TO-220-3	120 A	11550 pF		278 W
INFINEON IPP120N10S403AKSA1	AEC-Q101	MOSFET (Metal Oxide)		PG-TO220-3-1	N-Channel	175 °C	-55 °C		3.5 V	3.9 mOhm	Through Hole	250 W	10 V	Automotive	100 V	20 V	TO-220-3	120 A	10120 pF	140 nC