Discrete Semiconductor Products

IPP120N20NFDAKSA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; TO-220 PACKAGE; 12 MOHM; FAST DIODE

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DocumentsEOL Notices EN Simulation Model EN +1

Discrete Semiconductor Products

IPP120N20NFDAKSA1

Active

INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; TO-220 PACKAGE; 12 MOHM; FAST DIODE

Deep-Dive with AI

DocumentsEOL Notices EN Simulation Model EN +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP120N20NFDAKSA1

Current - Continuous Drain (Id) @ 25°C	84 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6650 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPP120 Series

Part	Qualification	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Grade	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
INFINEON IPP120N08S404AKSA1	AEC-Q101	MOSFET (Metal Oxide)	6450 pF	PG-TO220-3-1	N-Channel	175 °C	-55 °C	95 nC	4 V	4.4 mOhm	Through Hole	179 W	10 V	Automotive	80 V	20 V	TO-220-3	120 A
INFINEON IPP120N10S405AKSA1	AEC-Q101	MOSFET (Metal Oxide)	6540 pF	PG-TO220-3-1	N-Channel	175 °C	-55 °C	91 nC	3.5 V	5.3 mOhm	Through Hole	190 W	10 V	Automotive	100 V	20 V	TO-220-3	120 A
INFINEON IPP120N20NFDAKSA1		MOSFET (Metal Oxide)		PG-TO220-3	N-Channel	175 °C	-55 °C		4 V	12 mOhm	Through Hole	300 W	10 V		200 V	20 V	TO-220-3	84 A	6650 pF	87 nC
INFINEON IPP120P04P4L03AKSA1	AEC-Q101	MOSFET (Metal Oxide)	15000 pF	PG-TO220-3-1	P-Channel	175 °C	-55 °C		2.2 V	3.4 mOhm	Through Hole	136 W	4.5 V 10 V	Automotive	40 V	16 V	TO-220-3	120 A		234 nC
INFINEON IPP120N08S403AKSA1	AEC-Q101	MOSFET (Metal Oxide)		PG-TO220-3-1	N-Channel	175 °C	-55 °C	167 nC	4 V	2.8 mOhm	Through Hole		10 V	Automotive	80 V	20 V	TO-220-3	120 A	11550 pF		278 W
INFINEON IPP120N10S403AKSA1	AEC-Q101	MOSFET (Metal Oxide)		PG-TO220-3-1	N-Channel	175 °C	-55 °C		3.5 V	3.9 mOhm	Through Hole	250 W	10 V	Automotive	100 V	20 V	TO-220-3	120 A	10120 pF	140 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	53	$ 5.08
	Tube	1	$ 6.71
		10	$ 4.53
		100	$ 3.29
		500	$ 2.80
Newark	Each	1	$ 5.29
		10	$ 4.78
		25	$ 2.39
		50	$ 2.30
		100	$ 2.22
		250	$ 2.12
		500	$ 2.03

Description

General part information

IPP120 Series

OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.

Documents

Technical documentation and resources

EOL Notices EN

Datasheet

Simulation Model EN

Datasheet