Discrete Semiconductor Products
SI7431DP-T1-GE3
ActiveVishay General Semiconductor - Diodes Division
POWER FIELD-EFFECT TRANSISTOR, 2.2A I(D), 200V, 0.174OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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Discrete Semiconductor Products
SI7431DP-T1-GE3
ActiveVishay General Semiconductor - Diodes Division
POWER FIELD-EFFECT TRANSISTOR, 2.2A I(D), 200V, 0.174OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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Technical Specifications
Parameters and characteristics for this part
| Specification | SI7431DP-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.2 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 135 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | PowerPAK® SO-8 |
| Power Dissipation (Max) | 1.9 W |
| Rds On (Max) @ Id, Vgs [Max] | 174 mOhm |
| Supplier Device Package | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.93 | |
| 10 | $ 3.30 | |||
| 100 | $ 2.67 | |||
| 500 | $ 2.38 | |||
| 1000 | $ 2.03 | |||
| Digi-Reel® | 1 | $ 3.93 | ||
| 10 | $ 3.30 | |||
| 100 | $ 2.67 | |||
| 500 | $ 2.38 | |||
| 1000 | $ 2.03 | |||
| Tape & Reel (TR) | 3000 | $ 1.92 | ||
Description
General part information
SI7431 Series
P-Channel 200 V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Documents
Technical documentation and resources
