SI7431 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
POWER FIELD-EFFECT TRANSISTOR, 2.2A I(D), 200V, 0.174OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
| Part | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Vgs (Max) | FET Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 1.9 W | 135 nC | 6 V 10 V | 4 V | 2.2 A | Surface Mount | 200 V | -55 °C | 150 °C | 174 mOhm | PowerPAK® SO-8 | 20 V | P-Channel | PowerPAK® SO-8 |
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 1.9 W | 135 nC | 6 V 10 V | 4 V | 2.2 A | Surface Mount | 200 V | -55 °C | 150 °C | 174 mOhm | PowerPAK® SO-8 | 20 V | P-Channel | PowerPAK® SO-8 |